DocumentCode :
3088454
Title :
Heated ion implantation technology for highly reliable metal-gate/high-k CMOS SOI FinFETs
Author :
Mizubayashi, W. ; Onoda, Hiroshi ; Nakashima, Yuta ; Ishikawa, Yozo ; Matsukawa, T. ; Endo, Kazuhiro ; Liu, Y.X. ; O´uchi, S. ; Tsukada, J. ; Yamauchi, Hiroyuki ; Migita, S. ; Morita, Yusuke ; Ota, Hiroyuki ; Masahara, M.
Author_Institution :
Nanoelectron. Res. Inst. (NeRI), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear :
2013
fDate :
9-11 Dec. 2013
Abstract :
The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and reliability has been thoroughly investigated. It was demonstrated that heated I/I brings perfect crystallization after annealing even in ultrathin Si channel. For the first time, it was found that heated I/I dramatically improves the characteristics such as Ion-Ioff, Vth variability, and bias temperature instability (BTI) for both nMOS and pMOS FinFETs in comparison with conventional room temperature I/I.
Keywords :
CMOS integrated circuits; MOSFET; annealing; crystallisation; elemental semiconductors; ion implantation; silicon; silicon-on-insulator; BTI; Si; annealing; bias temperature instability; crystallization; heated ion implantation technology; high-k CMOS SOI FinFET; metal-gate FinFet; nMOS FinFET; pMOS FinFET; ultrathin Si channel; Annealing; Crystals; FinFETs; Heating; Ion implantation; Logic gates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
Type :
conf
DOI :
10.1109/IEDM.2013.6724670
Filename :
6724670
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3088454
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