Improved sidewall doping of extensions by AsH3 ion assisted deposition and doping (IADD) with small implant angle for scaled NMOS Si bulk FinFETs

We demonstrate a novel photoresist-compatible FinFET doping technique that combines the advantages of deposition and implantation. Energy and deposition thickness optimization for the Ion Assisted Deposition and Doping (IADD) process provides excellent doping of nMOS extensions, thus reducing external resistance R_EXT. On current I_ON is improved by 6-8% for L_G of 26-30 nm and by 15% for L_G of 20 nm, with better SCE and DIBL.