Title :
A low-cost, forming-free WOx ReRAM using novel self-aligned photo-induced oxidation
Author :
Feng-Min Lee ; Yu-Yu Lin ; Wei-Chih Chien ; Erh-Kun Lai ; Dai-Ying Lee ; Chih-Chieh Yu ; Han-Hui Hsu ; Ming-Hsiu Lee ; Hsiang-Lan Lung ; Kuang-Yeu Hsieh ; Chih-Yuan Lu
Author_Institution :
Emerging Central Lab., Macronix Int. Co., Ltd., Hsinchu, Taiwan
Abstract :
A novel CMOS compatible photo oxidation (PO) technology is proposed in this paper which, by only using standard DUV photo lithography process, demonstrates a strong oxidation capability to form CMOS compatible WOx. The oxidation occurs through catalytic chemical reaction during the post exposure baking (PEB) process. Based on this unique PO process, a high performance forming free 1T-1R WOx ReRAM is demonstrated. Furthermore, this PO WOx ReRAM can withstand high temperature baking (@ 250°C) for 30 min thus is suitable for embedded systems that require pre-coding, and automotive and other industrial applications.
Keywords :
embedded systems; oxidation; random-access storage; tungsten compounds; ultraviolet lithography; CMOS compatible photo-oxidation technology; DUV photolithography; PEB; ReRAM; WOx; catalytic chemical reaction; embedded systems; post exposure baking; resistive RAM; self-aligned photoinduced oxidation; temperature 250 degC; Lithography; Oxidation; Plasma temperature; Polymers; Resistance; Standards; Tin;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724672
