Title :
Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model
Author :
Degraeve, Robin ; Toledano-Luque, Maria ; Arreghini, A. ; Tang, Bo-Hui ; Capogreco, E. ; Lisoni, J. ; Roussel, Philippe ; Kaczer, Ben ; Van den bosch, G. ; Groeseneken, Guido ; Van Houdt, J.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The characterization of vertical poly-Si transistors, important for optimizing vertical SONOS memory configurations, is studied by means of a resistive network model. The statistical variation of the ISD-VG characteristics allows to extract the poly-Si grain size and from the sub-threshold regime information on the energy distribution of the poly-Si defects is extracted. This model indicates the separated impact of interface states and poly-Si states on current and Vth.
Keywords :
elemental semiconductors; flash memories; silicon; statistical analysis; SONOS memory configurations; Si; defect energy distribution; flash memory; grain size; interface states; resistive network model; statistical variation; subthreshold regime information; vertical poly-Si transistors; Data mining; Grain boundaries; Grain size; Logic gates; Silicon; Switches; Transconductance;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724675
