Unified reliability modeling of Ge-rich phase change memory for embedded applications

Author

Ciocchini, Nicola ; Palumbo, Elisabetta ; Borghi, M. ; Zuliani, Paola ; Annunziata, Roberto ; Ielmini, Daniele

Author_Institution

DEIB, Politec. di Milano & IU.NET, Milan, Italy

fYear

2013

fDate

9-11 Dec. 2013

Abstract

Phase change memory (PCM) is one of the most attractive solutions for embedded applications, thanks to the low cost of integration with the CMOS front-end and good scaling behavior. Embedded PCM (ePCM) must feature high-temperature stability during operation and solder bonding [1]. This work addresses reliability of PCM based on Ge-rich GeSbTe [2]. We evidence resistance drift and decay in the set state for the first time, which is attributed to grain-boundary relaxation and grain growth. A unified model is presented, capable of predicting the reliability of set/reset states at elevated temperature T.

Keywords

IV-VI semiconductors; germanium compounds; grain growth; phase change memories; reliability; thermal stability; CMOS front-end; GeSbTe; embedded PCM; grain boundary relaxation; grain growth; high-temperature stability; phase change memory; resistance drift; solder bonding; unified reliability modeling; Annealing; Crystallization; Phase change materials; Reliability; Resistance; Soldering; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724681

Filename

6724681