DocumentCode
3088898
Title
Variable nonvolatile memory arrays for adaptive computing systems
Author
Noguchi, Hiroki ; Takeda, Shigeki ; Nomura, Keigo ; Abe, Kiyohiko ; Ikegami, Kenshin ; Kitagawa, Eiji ; Shimomura, Naoharu ; Ito, Junichi ; Fujita, S.
Author_Institution
Corp. R & D Center, Toshiba Corp., Kawasaki, Japan
fYear
2013
fDate
9-11 Dec. 2013
Abstract
Magnetic RAM (MRAM) has a unique potential to change its memory capacity from small to large capacity. This paper presents a novel variable circuit based on 1T-1MTJ of perpendicular STT-MRAM memory arrays. It can cover all memory hierarchy and computing units that are variable and adjustable to applications by selecting single, dual or quadruple cell mode and changing circuit resources.
Keywords
magnetic storage; random-access storage; 1T-1MTJ; adaptive computing systems; circuit resources; computing units; magnetic RAM; memory capacity; memory hierarchy; nonvolatile memory arrays; perpendicular STT-MRAM memory arrays; quadruple cell mode; variable circuit; Arrays; Decoding; Magnetic tunneling; Nonvolatile memory; Random access memory; Registers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location
Washington, DC
Type
conf
DOI
10.1109/IEDM.2013.6724690
Filename
6724690
Link To Document