Extraction of the Small-Signal Equivalent Circuit Elements in HEMTs

Author

Aziz, M.M.A.

Author_Institution

Alexandria Higher Inst. of Technol.

Volume

0

fYear

2006

fDate

14-16 March 2006

Firstpage

1

Lastpage

6

Abstract

The aim of this paper is to provide an accurate extraction method for the small-signal equivalent circuit elements in HEMT, which can be used to determine the electrical properties and the high frequency performance of the device. Initially, the bias dependent parameters are determined using a quasi-static approach based on analytical expressions developed by us elsewhere. The extrinsic resistances are found by fitting the calculated I-V characteristics to the measured data. The other bias independent elements are determined using available extraction technique based on fitting the calculated S or Y-parameters obtained from circuit analysis to those measured at certain bias levels. The validity of the model is checked through the consistency of the transconductance and cutoff frequency values obtained from DC analysis to those obtained from RF analysis

Keywords

S-parameters; equivalent circuits; feature extraction; high electron mobility transistors; network analysis; DC analysis; HEMT; I-V characteristics; RF analysis; S-parameter; Y-parameter; bias dependent parameter; circuit analysis; cutoff frequency; electrical property; extraction method; extrinsic resistance; frequency performance; high electron mobility transistor; quasistatic approach; small-signal equivalent circuit element; transconductance; Capacitance; Circuit topology; Contact resistance; Electrical resistance measurement; Equivalent circuits; Frequency; HEMTs; MODFETs; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Science Conference, 2006. NRSC 2006. Proceedings of the Twenty Third National

Conference_Location

Menoufiya

Print_ISBN

977-5031-84-2

Electronic_ISBN

977-5031-84-2

Type

conf

DOI

10.1109/NRSC.2006.386377

Filename

4275174