Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)

Author

Ran Cheng ; Bin Liu ; Pengfei Guo ; Yue Yang ; Qian Zhou ; Xiao Gong ; Yuan Dong ; Yi Tong ; Bourdelle, Konstantin ; Daval, N. ; Delprat, D. ; Bich-Yen Nguyen ; Augendre, E. ; Yee-Chia Yeo

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore

fYear

2013

fDate

9-11 Dec. 2013

Abstract

We report the first demonstration of Ge gate-all-around (GAA) nanowire (NW) p-FETs integrated with a contractible liner stressor. High performance GAA NW p-FET featuring the smallest wire width W_NW of ~3.5 nm was fabricated. Peak intrinsic transconductance G_m of 581 μS/μm and SS of 125 mV/dec. were demonstrated. When the Ge NW p-FETs were integrated with the phase change material Ge₂Sb₂Te₅ (GST) as a liner stressor, high asymmetric strain was induced in the channel to boost the hole mobility, leading to ~95% intrinsic G_{m, lin} and ~34% extrinsic G_{m, sat} enhancement. Simulations show good scalability of strain due to GST liner stressor and its great potential for hole mobility enhancement.

Keywords

antimony compounds; field effect transistors; germanium; germanium compounds; nanowires; phase change materials; semiconductor device manufacture; Ge₂Sb₂Te₅; contractible liner stressor; gate-all-around nanowire p-FET; hole mobility enhancement; phase change liner stressor; phase change material; size 3.5 nm; Annealing; Field effect transistors; Hafnium compounds; Logic gates; Silicon; Strain; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724699

Filename

6724699