Title :
A versatile and cryogenic mHEMT-model including noise
Author :
Seelmann-Eggebert, Matthias ; Schafer, Frank ; Leuther, A. ; Massler, Hermann
Author_Institution :
Fraunhofer IAF, Freiburg, Germany
Abstract :
A versatile scalable small signal model for high electron mobility transistors (HEMTs) of gate length 50 nm and 100 nm has been developed. The model covers a large bias range and includes the temperature dependence from 300 K to 15 K. Especially, it is capable to predict the noise behaviour of the transistor in dependence of ambient temperature and frequency.
Keywords :
Cryogenics; Frequency; HEMTs; MODFETs; Predictive models; Temperature dependence; Temperature distribution;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5514916
