A Geiger mode APD fabricated in standard 65nm CMOS technology

Author

Charbon, E. ; Hyung-June Yoon ; Maruyama, Y.

Author_Institution

Delft Univ. of Technol., Delft, Netherlands

fYear

2013

fDate

9-11 Dec. 2013

Abstract

We present the first avalanche photodiode (APD) successfully fabricated in standard 65nm CMOS technology. The APD operates both in proportional and Geiger mode at -60C to +60C temperature range. The device comprises an octagonal n+p-well junction surrounded by an n-tub guard-ring; its photon detection probability peaks at 450nm with 200mV excess bias and it is above 1% between 350 and 750nm. The dark count rate is 1.5kHz/μm² at 200mV excess bias, while afterpulsing is less than 1% for a dead time longer than 5μs and timing jitter is better than 235ps. Applications include low-power, ultra-high-speed quantum number generators, time-of-flight 3D image sensors, LIDAR detectors, and time-resolved spectroscopy.

Keywords

CMOS integrated circuits; avalanche photodiodes; image sensors; optical radar; photon counting; semiconductor device models; time resolved spectroscopy; CMOS technology; Geiger mode APD; LIDAR detectors; avalanche photodiode; dark count rate; low power quantum number generators; octagonal junction; photon detection probability; size 65 nm; time of flight 3D image sensors; time resolved spectroscopy; ultrahigh speed quantum number generators; voltage 200 mV; CMOS integrated circuits; CMOS technology; Electric breakdown; Photonics; Standards; Temperature measurement; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2013 IEEE International

Conference_Location

Washington, DC

Type

conf

DOI

10.1109/IEDM.2013.6724705

Filename

6724705