DocumentCode :
3089253
Title :
High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel FETs with Zn-diffused source junctions
Author :
Noguchi, M. ; SangHyeon Kim ; Yokoyama, Masafumi ; SangMin Ji ; Ichikawa, Osamu ; Osada, Takenori ; Hata, Masaharu ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
fYear :
2013
fDate :
9-11 Dec. 2013
Abstract :
We have demonstrated the operation of high Ion/Ioff and low subthreshold slope planar-type InGaAs Tunnel FETs with Zn-diffused source junctions. It has been found that the solid-phase Zn diffusion can form steep-profile and defect-less p+/n source junctions because of the inherent nature of Zn diffusion into InGaAs, which has significantly improved the TFET performance. The present devices have exhibited the record small S.S. of 64 mV/dec and large Ion/Ioff ratio over106 as the planar-type III-V TFETs.
Keywords :
III-V semiconductors; diffusion; field effect transistors; gallium arsenide; indium compounds; zinc; InGaAs; TFET performance; Zn; Zn-diffused source junctions; defect-less p+/n source junctions; low subthreshold slope planar-type tunnel FET; planar-type III-V TFET; solid-phase diffusion; steep-profile; Impurities; Indium gallium arsenide; Ion implantation; Junctions; Temperature dependence; Tunneling; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
Type :
conf
DOI :
10.1109/IEDM.2013.6724707
Filename :
6724707
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3089253
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