Title :
High-Speed, Radiation-Tolerant Laser Drivers in 0.13
m CMOS Technology for HEP Applications
Author :
Mazza, Giovanni ; Tavernier, Filip ; Moreira, Paulo ; Calvo, Daniela ; De Remigis, Paolo ; Olantera, Lauri ; Soos, Csaba ; Troska, Jan ; Wyllie, Ken
Author_Institution :
Sez. di Torino, Ist. Naz. di Fis. Nucl., Turin, Italy
Abstract :
The gigabit laser driver (GBLD) and low-power GBLD (LpGBLD) are two radiation-tolerant laser drivers designed to drive laser diodes at data rates up to 4.8 Gb/s. They have been designed in the framework of the gigabit-transceiver (GBT) and versatile-link projects to provide fast optical links capable of operation in the radiation environment of future high-luminosity high-energy physics experiments. The GBLD provides laser bias and modulation currents up to 43 mA and 24 mA, respectively. It can thus be used to drive vertical cavity surface emitting laser (VCSEL) and edge-emitting laser diodes. A pre-emphasis circuit, which can provide up to 12 mA in 70 ps pulses, has also been implemented to compensate for high external capacitive loads. The current driving capabilities of the LpGBLD are 2 times smaller that those of the GBLD as it has been optimized to drive VCSELs in order to minimize the power consumption. Both application-specific integrated circuits are designed in 0.13 μm commercial complementary metal-oxide semiconductor technology and are powered by a single 2.5 V supply. The power consumption of the core circuit is 89 mW for the GBLD and 55 mW for the LpGBLD.
Keywords :
CMOS analogue integrated circuits; MIS devices; application specific integrated circuits; high energy physics instrumentation computing; optical links; radiation hardening (electronics); semiconductor lasers; CMOS technology; HEP application; VCSEL; application-specific integrated circuits; commercial complementary metal-oxide semiconductor technology; core circuit; edge-emitting laser diodes; external capacitive loads; gigabit laser driver; gigabit-transceiver; high-luminosity high-energy physics experiments; high-speed radiation-tolerant laser drivers; laser diodes; low-power GBLD; optical links; power 55 mW; power 89 mW; versatile-link projects; vertical cavity surface emitting laser; voltage 2.5 V; CMOS technology; Diode lasers; Optical fiber communication; Radiation hardening (electronics); Vertical cavity surface emitting lasers; Complementary metal–oxide semiconductor (CMOS) circuits; optical links; radiation hardening;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2361679