Title :
Conductive-bridge memory (CBRAM) with excellent high-temperature retention
Author :
Jameson, J.R. ; Blanchard, Patrick ; Cheng, C.-C. ; Dinh, J. ; Gallo, Alessandro ; Gopalakrishnan, V. ; Gopalan, Chakravarthy ; Guichet, B. ; Hsu, Steven ; Kamalanathan, D. ; Kim, Dongkyu ; Koushan, F. ; Kwan, Mike ; Law, K. ; Lewis, David ; Ma, Yanru ; M
Author_Institution :
Adesto Technol. Corp., Sunnyvale, CA, USA
Abstract :
High-temperature data retention is a critical hurdle for the commercialization of emerging nonvolatile memories. For Conductive-Bridge RAM (CBRAM) [1], we discuss high-temperature retention in terms of the physics of quantum point contacts, and we report on a family of CBRAM cells that achieve excellent retention at temperatures exceeding 200°C.
Keywords :
quantum point contacts; random-access storage; CBRAM cells; conductive-bridge RAM; conductive-bridge memory; high-temperature data retention; nonvolatile memories; quantum point contacts; Annealing; Anodes; Arrays; Metals; Random access memory; Resistance; Writing;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724721
