• DocumentCode
    3089883
  • Title

    Are carbon nanotubes still a viable option for ITRS 2024?

  • Author

    Pillai, P.B. ; Umari, P. ; De Souza, M.M.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    A critical assessment of the influence of the GW bandgap on the performance of CNT-TFETs reveals smaller on-off ratios and on-current than previously estimated. The revised band gaps are found to now explain a wide range of experimental SB CNTFETs in the literature. In the conventional TFET device geometry with uncovered source/drain regions, a semiconducting CNT of diameter 0.85 nm exhibit superior on-off ratio (>106), on-current (2000μA/μm @ a VDD= 0.3V) and device delay (~150 fs) that meets the requirement for ITRS 2024 technologies.
  • Keywords
    carbon nanotubes; field effect transistors; GW bandgap; ITRS; TFET; carbon nanotubes; size 0.85 nm; time 150 fs; voltage 0.3 V; CNTFETs; Delays; Geometry; Nanotubes; Performance evaluation; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724735
  • Filename
    6724735
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3089883