DocumentCode :
3089883
Title :
Are carbon nanotubes still a viable option for ITRS 2024?
Author :
Pillai, P.B. ; Umari, P. ; De Souza, M.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fYear :
2013
fDate :
9-11 Dec. 2013
Abstract :
A critical assessment of the influence of the GW bandgap on the performance of CNT-TFETs reveals smaller on-off ratios and on-current than previously estimated. The revised band gaps are found to now explain a wide range of experimental SB CNTFETs in the literature. In the conventional TFET device geometry with uncovered source/drain regions, a semiconducting CNT of diameter 0.85 nm exhibit superior on-off ratio (>106), on-current (2000μA/μm @ a VDD= 0.3V) and device delay (~150 fs) that meets the requirement for ITRS 2024 technologies.
Keywords :
carbon nanotubes; field effect transistors; GW bandgap; ITRS; TFET; carbon nanotubes; size 0.85 nm; time 150 fs; voltage 0.3 V; CNTFETs; Delays; Geometry; Nanotubes; Performance evaluation; Photonic band gap;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
Type :
conf
DOI :
10.1109/IEDM.2013.6724735
Filename :
6724735
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3089883
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