• DocumentCode
    3089925
  • Title

    Is sub-10nm thick 3D-topological insulator good for the local electrical interconnects?

  • Author

    Gupta, Gaurav ; Bin Abdul Jalil, Mansoor ; Gengchiau Liang

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    We examine the feasibility of using sub-10 nm thick 3D-TI (Bi2Se3) wire for the local electrical interconnects in the presence of edge roughness, vacancies, acoustic phonons and charge impurities across temperature and Fermi-level by simulating quantum transport via NEGF formalism. We found that because of phonons Bi2Se3 3D-TI may not be that promising a material to replace Cu for interconnects.
  • Keywords
    Green´s function methods; bismuth compounds; electron mobility; insulators; semiconductor device metallisation; spin-orbit interactions; 3D topological insulator; Bi2Se3; Fermi level; acoustic phonons; charge impurities; edge roughness; local electrical interconnects; quantum transport; vacancies; Acoustics; Impurities; Materials; Phonons; Photonic band gap; Topological insulators; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724738
  • Filename
    6724738
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3089925