Title :
Is sub-10nm thick 3D-topological insulator good for the local electrical interconnects?
Author :
Gupta, Gaurav ; Bin Abdul Jalil, Mansoor ; Gengchiau Liang
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
We examine the feasibility of using sub-10 nm thick 3D-TI (Bi2Se3) wire for the local electrical interconnects in the presence of edge roughness, vacancies, acoustic phonons and charge impurities across temperature and Fermi-level by simulating quantum transport via NEGF formalism. We found that because of phonons Bi2Se3 3D-TI may not be that promising a material to replace Cu for interconnects.
Keywords :
Green´s function methods; bismuth compounds; electron mobility; insulators; semiconductor device metallisation; spin-orbit interactions; 3D topological insulator; Bi2Se3; Fermi level; acoustic phonons; charge impurities; edge roughness; local electrical interconnects; quantum transport; vacancies; Acoustics; Impurities; Materials; Phonons; Photonic band gap; Topological insulators; Wires;
Conference_Titel :
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.2013.6724738
