• DocumentCode
    3090067
  • Title

    Analysis of transistor characteristics in distribution tails beyond ±5.4σ of 11 billion transistors

  • Author

    Mizutani, Tomoko ; Kumar, Ajit ; Hiramoto, Toshiro

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2013
  • fDate
    9-11 Dec. 2013
  • Abstract
    Transistors in distribution tails of 11G (11 billion) transistors were intensively measured and compared with transistors in the center of distribution. It is found that, while VTH defined by subthreshold constant current (VTHC) deviates from the normal distribution, extrapolated VTH (VTHEX) roughly follows the normal distribution. It is also found that some transistors show extraordinary low on-current (ION) which deviates from the normal distribution. The origin of abnormal distribution and the impact on yield loss are discussed based on measured results and 3D device simulation.
  • Keywords
    VLSI; field effect transistors; 11 billion FET; 3D device simulation; VLSI; distribution tails; subthreshold constant current; transistor characteristic analysis; yield loss; Correlation; Current measurement; Degradation; Field effect transistors; Gaussian distribution; Semiconductor device measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2013 IEEE International
  • Conference_Location
    Washington, DC
  • Type

    conf

  • DOI
    10.1109/IEDM.2013.6724743
  • Filename
    6724743