DocumentCode
3090067
Title
Analysis of transistor characteristics in distribution tails beyond ±5.4σ of 11 billion transistors
Author
Mizutani, Tomoko ; Kumar, Ajit ; Hiramoto, Toshiro
Author_Institution
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
fYear
2013
fDate
9-11 Dec. 2013
Abstract
Transistors in distribution tails of 11G (11 billion) transistors were intensively measured and compared with transistors in the center of distribution. It is found that, while VTH defined by subthreshold constant current (VTHC) deviates from the normal distribution, extrapolated VTH (VTHEX) roughly follows the normal distribution. It is also found that some transistors show extraordinary low on-current (ION) which deviates from the normal distribution. The origin of abnormal distribution and the impact on yield loss are discussed based on measured results and 3D device simulation.
Keywords
VLSI; field effect transistors; 11 billion FET; 3D device simulation; VLSI; distribution tails; subthreshold constant current; transistor characteristic analysis; yield loss; Correlation; Current measurement; Degradation; Field effect transistors; Gaussian distribution; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2013 IEEE International
Conference_Location
Washington, DC
Type
conf
DOI
10.1109/IEDM.2013.6724743
Filename
6724743
Link To Document