Title :
Minimizing simultaneous switching noise (SSN) using modified odd/even bus invert method
Author :
Sainarayanan, K.S. ; Ravindra, J.V.R. ; Srinivas, M.B.
Author_Institution :
Center for VLSI & Embedded Syst., Int. Inst. of Inf. Technol., Hyderabad, India
Abstract :
In high speed digital circuits, the inductive effect is more dominant compared to capacitive effect. In particular, as the technology is shrinking, the spacing between interconnects becomes less which increases simultaneous switching noise (SSN) or M(di/dt) noise. So earlier methods proposed which concentrate on reducing capacitive effect do not hold good. This paper proposes a modified odd/even bus invert scheme, which reduces the simultaneous switching activity, thereby improving the signal integrity. The performance of the proposed coding scheme has been tested on various benchmarks and it is found that SSN or M(di/dt) is reduced by 28% compared to data transmitted unencoded. The proposed codec has been designed and it has been found that power overhead is 3.3%.
Keywords :
digital integrated circuits; high-speed integrated circuits; inductance; integrated circuit interconnections; integrated circuit noise; integrated circuit testing; M(di/dt) noise; high speed digital circuits; inductive effect; interconnects spacing; odd/even bus invert method; simultaneous switching activity; simultaneous switching noise; Capacitance; Circuit noise; Crosstalk; Inductance; Integrated circuit interconnections; Integrated circuit packaging; Semiconductor device noise; Semiconductor device packaging; Very large scale integration; Voltage; Coding; Even Simultaneous Transitions (EST); Low power.; Odd Simultaneous Transitions (OST); Simultaneous Switching Noise (SSN); VLSI;
Conference_Titel :
Electronic Design, Test and Applications, 2006. DELTA 2006. Third IEEE International Workshop on
Print_ISBN :
0-7695-2500-8
DOI :
10.1109/DELTA.2006.68