DocumentCode :
3090877
Title :
Design of a Low-Voltage CMOS Charge Pump
Author :
Cheng, Chun Yu ; Leung, Ka Nang ; Sun, Yi Ki ; Or, Pui Ying
Author_Institution :
Chinese Univ. of Hong Kong, Hong Kong
fYear :
2008
fDate :
23-25 Jan. 2008
Firstpage :
342
Lastpage :
345
Abstract :
A charge pump based on the cross-coupled structure generates a 2x VDD output. The circuit delivering 10 mA@VDD = 0.9 V from a single NiMH battery is designed in a commercial 0.35 mum CMOS process. The design operates at a supply voltage as low as VDD = 0.9 V with efficiency of better than 80% and the maximum VDD is 1.4V. The implementation method of the cross-coupled charge pump is summarized in this paper.
Keywords :
CMOS integrated circuits; integrated circuit design; low-power electronics; secondary cells; Ni-JkH; cross-coupled structure; current 10 mA; low-voltage CMOS charge pump design; single battery; voltage 0.9 V; voltage 1.4 V; Capacitors; Charge pumps; Clocks; Electronic equipment testing; MOSFET circuits; Power supplies; Power transistors; Steady-state; Switches; Voltage; Charge pump; efficiency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Design, Test and Applications, 2008. DELTA 2008. 4th IEEE International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-0-7695-3110-6
Type :
conf
DOI :
10.1109/DELTA.2008.48
Filename :
4459568
Link To Document :
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