Title :
Repair yield simulation with iterative critical area analysis for different types of failure
Author :
Hamamura, Yuichi ; Nemoto, Kazunori ; Kumazawa, Takaaki ; Iwata, Hisafumi ; Okuyama, Kousuke ; Kamohara, Shiro ; Sugimoto, Aritoshi
Author_Institution :
Production Eng. Res. Lab., Hitachi Ltd., Kanagawa, Japan
Abstract :
We propose a general method for repair yield estimation based on critical area analysis using a commercial Monte-Carlo simulator. We classify failures into several types according to the repair rules and use iterative critical area analysis for each type of failure (ICAA-ETF) to calculate the repair yield. Our proposed method makes it possible to accurately estimate within a few hours the repair yield of a memory product. An example of application to an actual SRAM product is discussed to illustrate in detail how our method can be used for critical area calculation and repair yield modeling.
Keywords :
Monte Carlo methods; SRAM chips; circuit simulation; failure analysis; integrated circuit yield; iterative methods; ICAA-ETF; Monte-Carlo simulator; SRAM product; failure; iterative critical area analysis; memory product; repair rules; repair yield simulation; simulation procedure; Analytical models; Circuit simulation; Computer aided analysis; Failure analysis; Integrated circuit yield; Manufacturing; Random access memory; Redundancy; Variable structure systems; Yield estimation;
Conference_Titel :
Defect and Fault Tolerance in VLSI Systems, 2002. DFT 2002. Proceedings. 17th IEEE International Symposium on
Print_ISBN :
0-7695-1831-1
DOI :
10.1109/DFTVS.2002.1173527