Title :
Effect of Implantation Defects and Carbon Incorporation on Si/SiGe Bipolar Characteristics
Author :
Bouhouche, M. ; Latreche, S. ; Gontrand, C.
Author_Institution :
Dept. Electron., Univ. de Constantine, Constantine, Algeria
Abstract :
Incorporation of carbon in SiGe has attracted great interest, which makes SiGeC based heterojunction transistors as an attractive device for high frequency applications. Carbon addition in SiGe dramatically reduces out-diffusion of boron caused by excess of interstitials generated by extrinsic base implantation. However carbon incorporation negatively influences the electrical device characteristics. In this paper we investigate active implantation defects, the aim was to the specify space localization and parasitic effects of this ones. Second, we investigate the impact of carbon content on the electrical characteristics of device, the results show that indeed C contents ¿ 1% severely degrade transistor performances.
Keywords :
Ge-Si alloys; carbon; diffusion; elemental semiconductors; heterojunction bipolar transistors; interstitials; p-n heterojunctions; semiconductor device models; semiconductor doping; silicon; Si-SiGe:C; bipolar characteristics; boron out-diffusion; carbon incorporation; electrical characteristics; extrinsic base implantation; heterojunction transistors; high-frequency applications; implantation defects; interstitials; parasitic effects; space localization; Boron; CMOS technology; Capacitive sensors; Degradation; Electric variables; Germanium silicon alloys; Heterojunction bipolar transistors; Modeling; Photonic band gap; Silicon germanium; Band gap; Carbon; HBT; ISE-TCAD; SiGe; active defects;
Conference_Titel :
Computer and Electrical Engineering, 2009. ICCEE '09. Second International Conference on
Conference_Location :
Dubai
Print_ISBN :
978-1-4244-5365-8
Electronic_ISBN :
978-0-7695-3925-6
DOI :
10.1109/ICCEE.2009.180
