95 GHz f/sub T/ self-aligned selective epitaxial SiGe HBT with SMI electrodes [optical fiber communication equipment]

Author

Washio, K. ; Ohue, E. ; Oda, K. ; Tanabe, M. ; Shimamoto, H. ; Onal, T.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

1998

fDate

5-7 Feb. 1998

Firstpage

312

Lastpage

313

Abstract

A static frequency divider operating up to 50 GHz and a multiplexer (MUX) operating at 40 Gb/s are presented for future optical-fiber link systems at 40 Gb/s data rate in global communications applications. These digital circuits are fabricated in self-aligned selective-epitaxial SiGe-base heterojunction bipolar transistors (HBTs) with self-aligned stacked metal/lDP (SMI) electrodes. These HBTs provide a 95 GHz cutoff frequency and 8 ps ECL gate delay in Si bipolar technology.

Keywords

Ge-Si alloys; 40 Gbit/s; 50 GHz; 95 GHz; SMI electrodes; Si bipolar technology; SiGe-Si; digital circuits; heterojunction bipolar transistors; multiplexer; optical-fiber link systems; selective epitaxial SiGe HBT; self-aligned SiGe HBT; self-aligned stacked metal/lDP electrodes; static frequency divider; Capacitance; Delay; Electrodes; Flip-flops; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Optical frequency conversion; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1998. Digest of Technical Papers. 1998 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-4344-1

Type

conf

DOI

10.1109/ISSCC.1998.672481

Filename

672481