Title :
Multiple peak resonant tunneling diode for multi-valued memory
Author :
Wei, Sen-Jung ; Lin, Hung Chang
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Several designs for a high-speed static random access multivalued memory using the folding characteristics of multiple peak resonant tunneling diodes (RTDs) are presented. The different designs are described and studied by comparing their power consumption under different conditions of device parameters and the switching speed. It is shown that the proposed memory cell using a pair of multiple-peak RTDs yields the best result from the standpoint of size, power dissipation, and speed
Keywords :
SRAM chips; many-valued logics; resonant tunnelling devices; tunnel diodes; device parameters; folding characteristics; high-speed static random access multivalued memory; memory cell; multi-valued memory; multiple peak resonant tunneling diodes; multiple-peak RTDs; power consumption; power dissipation; switching speed; Diodes; Educational institutions; Energy consumption; Integrated circuit interconnections; Multivalued logic; Power dissipation; Power system interconnection; Resistors; Resonant tunneling devices; Voltage;
Conference_Titel :
Multiple-Valued Logic, 1991., Proceedings of the Twenty-First International Symposium on
Conference_Location :
Victoria, BC
Print_ISBN :
0-8186-2145-1
DOI :
10.1109/ISMVL.1991.130728
