DocumentCode
3091667
Title
A Scan-Based Delay Test Method for Reduction of Overtesting
Author
Liu, Hui ; Li, Huawei ; Hu, Yu ; Li, Xiaowei
Author_Institution
Chinese Acad. of Sci., Beijing
fYear
2008
fDate
23-25 Jan. 2008
Firstpage
521
Lastpage
526
Abstract
This paper presents a scan-based delay test method, called sequential-broad-side (SeBoS), to minimize overtesting of delay test. We consider two critical reasons for overtesting which are the existence of illegal states in sequential circuits and the high IR drop caused by power dissipation during structural test. The proposed SeBoS method inserts several slow clock cycles before applying the fast clock for detecting delay faults, thus considerable illegal states can be avoided and IR drop can be reduced. Illegal states are not necessarily computed before test generation. They can be accumulated and expanded during the automatic test pattern generation (ATPG) process. The derived illegal states are then used to guide test generation for the remaining faults. Compared with previous methods, the SeBoS method can avoid more illegal states when considering the same number of time frames. Experimental results on ISCAS-89 benchmark circuits show the effectiveness of the method.
Keywords
VLSI; automatic test pattern generation; design for testability; integrated circuit design; integrated circuit testing; logic design; sequential circuits; ATPG process; IR drop; ISCAS-89 benchmark circuits; VLSI circuits; automatic test pattern generation; design-for-testability techniques; illegal states; overtesting reduction; power dissipation; scan-based delay test method; sequential circuits; sequential-broad-side method; structural test; Automatic test pattern generation; Circuit faults; Circuit testing; Clocks; Delay; Electrical fault detection; Fault detection; Power dissipation; Sequential analysis; Sequential circuits; IR drop; SeBoS; delay test; overtesting;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Design, Test and Applications, 2008. DELTA 2008. 4th IEEE International Symposium on
Conference_Location
Hong Kong
Print_ISBN
978-0-7695-3110-6
Type
conf
DOI
10.1109/DELTA.2008.25
Filename
4459606
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