• DocumentCode
    309187
  • Title

    A performance update for production power processes

  • Author

    Frank, Randy

  • Author_Institution
    Semicond. Product Sector, Motorola Inc., Phoenix, AZ, USA
  • Volume
    1
  • fYear
    1997
  • fDate
    23-27 Feb 1997
  • Firstpage
    10
  • Abstract
    Power processes continue to evolve and achieve higher performance levels than previous generations. Market- or application-specific solutions allow a semiconductor manufacturer to meet tough specifications for highly-competitive end products by optimizing production processes for performance and yield. The system designers´ challenges in computing, wireless communications, portable equipment, industrial and automotive applications are being answered with a variety of silicon technologies. These technologies include: megahertz and ultrafast rectifiers, power MOSFETs in very low (<30 V), low (30-100 V) medium (100-250 V) and high (>250 V) voltage ratings and IGBTs (insulated gate bipolar transistors) (500-2000 V) from a number of suppliers. More advanced technologies such as GaAs (gallium arsenide) are provided by a limited number of suppliers and meet very specific market/application requirements. Also, the addition of on-board circuitry, including smart power levels of integration, continues to provide performance advantages for many applications. With increasing speed and lower power dissipation requirements, packaging is more critical than ever to the successful application of power devices. This paper discusses the advantages and differences between production power technologies in the context of the applications that they are addressing and provides some insight into where they are going in the near future. Packaging is also covered as it relates to performance targets of the applications
  • Keywords
    automotive electronics; insulated gate bipolar transistors; power MOSFET; power electronics; rectifying circuits; semiconductor device packaging; 30 to 2000 V; GaAs; IGBT; automotive applications; computing; gallium arsenide; industrial applications; insulated gate bipolar transistors; on-board circuitry; packaging; portable equipment; power MOSFET; power dissipation; production power processes performance; production processes optimisation; silicon technologies; smart power levels; ultrafast rectifiers; wireless communications; Gallium arsenide; Insulated gate bipolar transistors; Manufacturing processes; Optimized production technology; Packaging; Portable computers; Power generation; Semiconductor device manufacture; Silicon on insulator technology; Wireless communication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition, 1997. APEC '97 Conference Proceedings 1997., Twelfth Annual
  • Conference_Location
    Atlanta, GA
  • Print_ISBN
    0-7803-3704-2
  • Type

    conf

  • DOI
    10.1109/APEC.1997.581427
  • Filename
    581427