Title :
Smart power transistors for electronic ballasts
Author :
Aiello, N. ; La Barbera, A. ; Sueri, S. ; Sukumar, Vajapeyam
Author_Institution :
SGS-Thomson Microelectron., Catania, Italy
Abstract :
A new vertical power IC process was used to design a cost-competitive, three terminal TO-220 power switching device, the VB348, which is optimized for fluorescent ballast applications. This IC comprises a high voltage power bipolar transistor, MOS emitter switch, drive circuitry and protection features (including overtemperature shutdown). The application in a commercial ballast and the problems related to the various parasitic effects are discussed. Overtemperature protection and reduced variation in switching parameters are key advantages
Keywords :
bipolar transistor switches; fluorescent lamps; integrated circuit packaging; lamp accessories; power bipolar transistors; power integrated circuits; power semiconductor switches; MOS emitter switch; TO-220 power switching device; VB348; drive circuitry; electronic ballasts; fluorescent ballast applications; overtemperature protection; parasitic effects; power bipolar transistor; protection features; smart power transistors; switching parameters; vertical power IC process; Bipolar integrated circuits; Bipolar transistors; Design optimization; Electronic ballasts; Fluorescence; Power integrated circuits; Power transistors; Protection; Switches; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1997. APEC '97 Conference Proceedings 1997., Twelfth Annual
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-3704-2
DOI :
10.1109/APEC.1997.581451
