Title :
Thermally stable SiO2/AlN/SiO2 Lamb wave resonators utilizing the lowest-order symmetric mode at high temperatures
Author :
Jie Zou ; Chih-Ming Lin ; Senesky, Debbie G. ; Pisano, Albert P.
Author_Institution :
Dept. of Mech. Eng., Univ. of California, Berkeley, Berkeley, CA, USA
Abstract :
Thermal compensation at high temperatures for Lamb wave resonators utilizing the lowest symmetric (S0) mode in a SiO2/AlN/SiO2 sandwiched structure is theoretically investigated in this work. When temperature raises from room temperature to 600°C, the deformation and displacement caused by the thermal expansion mismatch in the SiO2/AlN/SiO2 symmetric composite plate is much less than a conventional temperature compensation plate, i.e. the AlN/SiO2 composite plate. Acoustic characteristics of the SiO2/AlN/SiO2 symmetric membrane with three main electrode configurations are investigated, exhibiting higher phase velocity and larger electromechanical coupling coefficient than the common AlN/SiO2 layered structure since the symmetric sandwiched plate traps more acoustic waves in the AlN layer. In addition, with proper thicknesses of the AlN and SiO2 layers, the S0 mode can simultaneously achieve a turnover temperature at high temperatures and a large intrinsic k2 in the SiO2/AlN/SiO2 sandwiched structure.
Keywords :
acoustic wave velocity; aluminium compounds; composite materials; deformation; electrodes; electromechanical effects; high-temperature effects; plates (structures); sandwich structures; silicon compounds; structural acoustics; surface acoustic wave resonators; thermal expansion; SiO2-AlN-SiO2; acoustic waves; conventional temperature compensation plate; deformation; electrode configurations; electromechanical coupling coefficient; high temperature effect; higher phase velocity; layered structure; lowest-order symmetric mode; sandwiched structure; symmetric composite plate; symmetric membrane; symmetric sandwiched plate traps; temperature 19.85 degC to 600 degC; thermal compensation; thermal expansion mismatch; thermally stable Lamb wave resonators; turnover temperature; Acoustic waves; Aluminum nitride; Couplings; Electrodes; III-V semiconductor materials; Temperature; Temperature sensors; Lamb wave resonator; RF MEMS; aluminium nitride; electromechanical coupling coefficient; harsh enviroment; high temperature compensation; silicon dioxide;
Conference_Titel :
Ultrasonics Symposium (IUS), 2013 IEEE International
Conference_Location :
Prague
Print_ISBN :
978-1-4673-5684-8
DOI :
10.1109/ULTSYM.2013.0276