Packaging issues for next generation high voltage, high temperature power electronic modules

Author

Bowers, John S. ; Hopkins, Douglas C. ; Sarjeant, W. James

Author_Institution

Custom Electron. Inc., Oneonta, NY, USA

Volume

1

fYear

1997

fDate

23-27 Feb 1997

Firstpage

413

Abstract

This paper describes packaging issues related to the next generation of high voltage (>2 kV), high temperature (200°C to 400°C) power electronic modules that are being developed for military, commercial and industrial applications. These applications include space, nuclear power and down-hole systems. Components, materials and processes are considered. Effects due to variations in thickness of the copper interconnect, ceramic substrate and heat spreader (baseplate) are investigated to predict the effects of thermally induced stresses. Thinner ceramic layers provide a significant increase in the thermal conductance and lower thermally induced stresses during system operation

Keywords

heat sinks; integrated circuit interconnections; integrated circuit packaging; power integrated circuits; thermal analysis; thermal conductivity; 200 to 400 C; applications; ceramic substrate; copper interconnect; heat spreader; high temperature; packaging issues; power electronic modules; thermal conductance; thermally induced stresses; Ceramics; Conducting materials; Defense industry; Electronics industry; Electronics packaging; Power electronics; Temperature; Thermal conductivity; Thermal stresses; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 1997. APEC '97 Conference Proceedings 1997., Twelfth Annual

Conference_Location

Atlanta, GA

Print_ISBN

0-7803-3704-2

Type

conf

DOI

10.1109/APEC.1997.581483

Filename

581483