Title :
A review on fast power diode development and modern novel structures
Author :
Rahimo, M.T. ; Shammas, N.Y.A.
Author_Institution :
Staffordshire Univ., Stafford, UK
Abstract :
This work reviews the development of fast power diodes. It also includes a comparison of conventional and novel diode structures (SPEED, SSD, MPS, ESD, P-IN, CIC, ECPT, SFD, Buffer Layer Diodes, and the Hybrid Diode), analysed using the semiconductor device simulation package ETH/DESSIS/ise. Simulations were carried out for the forward and reverse I-V static characteristics, and for the forward and reverse recovery behaviour under the same operating conditions. The advantages and disadvantages of each design on the diode overall performance are outlined
Keywords :
power semiconductor diodes; ETH/DESSIS/is; I-V static characteristics; fast power diodes; recovery; semiconductor device simulation package;
Conference_Titel :
New Developments in Power Semiconductor Devices, IEE Colloquium on (Digest No: 1996/046)
Conference_Location :
London
DOI :
10.1049/ic:19960859
