DocumentCode
3092059
Title
A review on fast power diode development and modern novel structures
Author
Rahimo, M.T. ; Shammas, N.Y.A.
Author_Institution
Staffordshire Univ., Stafford, UK
fYear
1996
fDate
35237
Firstpage
42401
Lastpage
212
Abstract
This work reviews the development of fast power diodes. It also includes a comparison of conventional and novel diode structures (SPEED, SSD, MPS, ESD, P-IN, CIC, ECPT, SFD, Buffer Layer Diodes, and the Hybrid Diode), analysed using the semiconductor device simulation package ETH/DESSIS/ise. Simulations were carried out for the forward and reverse I-V static characteristics, and for the forward and reverse recovery behaviour under the same operating conditions. The advantages and disadvantages of each design on the diode overall performance are outlined
Keywords
power semiconductor diodes; ETH/DESSIS/is; I-V static characteristics; fast power diodes; recovery; semiconductor device simulation package;
fLanguage
English
Publisher
iet
Conference_Titel
New Developments in Power Semiconductor Devices, IEE Colloquium on (Digest No: 1996/046)
Conference_Location
London
Type
conf
DOI
10.1049/ic:19960859
Filename
576379
Link To Document