Title :
Plasmonic-based GaAs balanced metal-semiconductor-metal photodetector with high common mode rejection ratio
Author :
Karar, Abdullah ; Chee Leong Tan ; Alameh, Kamal ; Yong Tak Lee
Author_Institution :
Electron Sci. Res. Inst., Edith Cowan Univ., Joondalup, WA, Australia
Abstract :
We propose and demonstrate a plasmonic-based GaAs balanced metal-semiconductor-metal photodetector (BMSM-PD) structure. A dual-beam FIB/SEM is employed for the fabrication of the metal nano-gratings and slits of the B-MSMPD. A common mode rejection ratio (CMRR) value less than 25 dB at 830nm wavelength, dependent on the applied bias, is measured. This adequate CMRR value indicates that the BMSM-PD structure substantially suppresses laser intensity noise, making it suitable for ultra-high-speed optical telecommunication systems. In addition, this work paves the way for the monolithic integration of B-MSM-PDs into large scale semiconductor circuits.
Keywords :
III-V semiconductors; diffraction gratings; focused ion beam technology; gallium arsenide; metal-semiconductor-metal structures; optical fabrication; photodetectors; plasmonics; scanning electron microscopy; BMSM-PD structure; GaAs; applied bias; common mode rejection ratio; dual-beam FIB/SEM; large scale semiconductor circuits; laser intensity noise suppression; metal nanogratings; metal slits; monolithic integration; plasmonic-based GaAs balanced metal-semiconductor-metal photodetector; ultra-high-speed optical telecommunication; wavelength 830 nm; Dielectrics; Gallium arsenide; Indexes; Noise measurement; Optical imaging; Semiconductor device measurement; Balanced photodetectors; Common mode Rejection Ratio; FDTD methods; MSM photodetectors; surface plasmon polaritons;
Conference_Titel :
High Capacity Optical Networks and Enabling Technologies (HONET), 2012 9th International Conference on
Conference_Location :
Istanbul
Print_ISBN :
978-1-4673-2891-3
DOI :
10.1109/HONET.2012.6421456
