Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunneling capacitance and polysilicon gate depletion effect

A model for static and transient simulations of an electrically erasable programmable read only memory cell has been developed. This physical compact model is based on charge sheet approach which is able to describe the complete electrical behavior of the cell. In this model, we have introduced the dependence of the tunneling capacitance as a function of the voltage across the tunnel oxide and the floating gate depletion effect. This model has been successfully implemented in common circuit simulators and used for the study of the write/erase operations in a memory cell. The simulations compared to the experimental results are in good agreement