A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability

Author

Ma, Chenyue ; Li, Bo ; Zhang, Lining ; He, Jin ; Zhang, Xing ; Lin, Xinnan ; Chan, Mansun

Author_Institution

Shenzhen Grad. Sch., Micro- & Nano Electron. Device & Integrated Technol. Group, Peking Univ., Beijing

fYear

2009

fDate

16-18 March 2009

Firstpage

7

Lastpage

12

Abstract

A unified FinFET reliability model including high K stack dynamic threshold (HKSDT), hot carrier injection (HCI), and negative bias temperature instability (NBTI) has been developed and verified by experimental data. The FinFET-based circuit performances are simulated and compared under these reliability issues by HSPICE simulator after the inclusion of the presented model.

Keywords

MOSFET; high-k dielectric thin films; hot carriers; semiconductor device models; semiconductor device reliability; FinFET reliability model; FinFET-based circuit performance simulation; HKSDT; NBTI; high K gate stack dynamic threshold voltage; hot carrier injection; negative bias temperature instability; Circuit simulation; FinFETs; High K dielectric materials; High-K gate dielectrics; Hot carrier injection; Human computer interaction; Negative bias temperature instability; Niobium compounds; Threshold voltage; Titanium compounds; HCI; HKSDT; Model; NBTI; Reliability; circuit;

fLanguage

English

Publisher

ieee

Conference_Titel

Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design

Conference_Location

San Jose, CA

Print_ISBN

978-1-4244-2952-3

Electronic_ISBN

978-1-4244-2953-0

Type

conf

DOI

10.1109/ISQED.2009.4810262

Filename

4810262