Title :
Transmission line with 2-kV HBM broadband ESD protection using BIMOS and SCR in advanced CMOS technologies
Author :
Tekfouy Lim ; Jimenez, Joaquin ; Heitz, B. ; Benech, Ph ; Fournier, Jacques ; Galy, Ph
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
Advanced CMOS technologies provide an easier way to realize radio-frequency integrated circuits (RFICs). However, transistor gates are getting smaller and electrostatic discharges (ESD) issues become more significant. Unfortunately, ESD protections parasitic capacitance limits the operating bandwidth of the RFICs. ESD protection size dimensions are also an issue to protect RFICs. This paper presents measurements results of ESD protection devices able to be implemented in an I/O pad in advanced CMOS technologies.
Keywords :
BIMOS integrated circuits; CMOS integrated circuits; electrostatic discharge; low-power electronics; radiofrequency integrated circuits; thyristors; transmission lines; BIMOS; HBM broadband ESD protection; RFIC; SCR; advanced CMOS technologies; electrostatic discharges; radio-frequency integrated circuits; transistor gates; transmission line; voltage 2 kV; BiCMOS integrated circuits; CMOS integrated circuits; CMOS technology; Electrostatic discharges; Radio frequency; Transistors; Transmission line measurements; Electrostatic discharges (ESD); advanced CMOS technology; integrated; radio-frequency integrated circuit (RFIC); transmission lines;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2012 Asia-Pacific
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4577-1330-9
Electronic_ISBN :
978-1-4577-1331-6
DOI :
10.1109/APMC.2012.6421491
