Title :
Comparison of supply noise and substrate noise reduction in SiGe BiCMOS and FDSOI processes
Author :
Cheong, Wai Leng ; Owens, Brian ; Pham, Hui En ; Hanken, Christopher ; Le, Jim ; Fiez, Terri ; Mayaram, Kartikeya
Author_Institution :
Sch. of EECS, Oregon State Univ., Corvallis, OR
Abstract :
In this paper, substrate noise suppression for 0.18 mum SiGe BiCMOS and fully-depleted silicon on insulator (FDSOI) processes is evaluated and compared. For both technologies, the most effective way for substrate noise reduction is assessed to identify the best approach for noise mitigation. The results show that the FDSOI process with large separation between analog and digital blocks is a more efficient substrate crosstalk suppression method compared to the best case in the SIGe BiCMOS process.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; semiconductor materials; silicon-on-insulator; BiCMOS; SiGe; fully-depleted silicon on insulator; noise mitigation; size 0.18 mum; substrate crosstalk suppression method; substrate noise reduction; BiCMOS integrated circuits; Circuit noise; Circuit testing; Coupling circuits; Crosstalk; Germanium silicon alloys; Integrated circuit noise; Noise reduction; Silicon germanium; Silicon on insulator technology; SOI; SiGe BiCMOS; noise reduction; substrate noise; substrate noise comparison;
Conference_Titel :
Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2952-3
Electronic_ISBN :
978-1-4244-2953-0
DOI :
10.1109/ISQED.2009.4810279
