DocumentCode :
3093377
Title :
Technology impacts on sub-90nm CMOS circuit design & design methodologies
Author :
Puri, R. ; Karnik, T. ; Joshi, R.
Author_Institution :
IBM TJ Watson Res. Center, Yorktown, NY, USA
fYear :
2006
fDate :
3-7 Jan. 2006
Abstract :
Summary form only for tutorial. This tutorial discusses design challenges of scaled CMOS circuits in sub-90nm technologies and the design methodologies required to design them in order to produce robust designs with desired power performance trade-off. It is increasingly difficult to sustain supply and threshold voltage scaling to provide the required performance increase, limit energy consumption, control power dissipation, and maintain reliability. These requirements pose several difficulties across a range of disciplines. On the technology front, the question arises whether we can continue along the traditional CMOS scaling path - reduce effective oxide thickness, improve channel mobility, and minimize parasitics. On the design front, researchers are exploring various circuit design techniques to deal with process variation, leakage and soft errors.
Keywords :
CMOS integrated circuits; circuit optimisation; integrated circuit design; integrated circuit reliability; CMOS circuit design; CMOS scaling path; channel mobility; energy consumption; oxide thickness reduction; power dissipation control; threshold voltage scaling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, 2006. Held jointly with 5th International Conference on Embedded Systems and Design., 19th International Conference on
Conference_Location :
Hyderabad, India
ISSN :
1063-9667
Print_ISBN :
0-7695-2502-4
Type :
conf
DOI :
10.1109/VLSID.2006.156
Filename :
1581411
Link To Document :
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