DocumentCode :
3093411
Title :
New subthreshold concepts in 65nm CMOS technology
Author :
Moradi, Farshad ; Wisland, Dag T. ; Mahmoodi, Hamid ; Peiravi, Ali ; Aunet, Snorre ; Cao, Tuan Vu
Author_Institution :
Dept. of Inf., Univ. of Oslo, Oslo
fYear :
2009
fDate :
16-18 March 2009
Firstpage :
162
Lastpage :
166
Abstract :
In this paper challenges observed in 65 nm technology for circuits utilizing subthreshold region operation are presented. Different circuits are analyzed and simulated for ultra low supply voltages to find the best topology for subthreshold operation. To support the theoretical discussions different topologies are analyzed and simulated. Various aspects of flip-flop circuits are described in detail to study which topology would be most suitable for ultra low supply voltage and low-power applications. Simulation results show that the power consumption decreases by at least 23% compared with other flip-flops. Also, the setup time and the hold time are improved.
Keywords :
CMOS integrated circuits; flip-flops; power consumption; 65 nm CMOS technology; flip-flop circuits; power consumption; subthreshold region operation; Analytical models; CMOS technology; Circuit simulation; Circuit topology; Energy consumption; Flip-flops; Leakage current; Low voltage; Threshold voltage; Wireless sensor networks; Low-voltage; low-power; nanoscale; subthreshold;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2952-3
Electronic_ISBN :
978-1-4244-2953-0
Type :
conf
DOI :
10.1109/ISQED.2009.4810287
Filename :
4810287
Link To Document :
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