DocumentCode :
3093457
Title :
A method of varactor capacitance modulation reduction in CMOS LC-VCOs
Author :
Kokotovic, D.
Author_Institution :
Norwegian University of Science and Technology (NTNU) Dept. of Electronics and Telecommunications, N-7491 Trondheim, Norway
fYear :
2004
fDate :
8-9 Nov. 2004
Firstpage :
111
Lastpage :
114
Abstract :
A method of varactor capacitance modulation reduction is proposed based on the varactor elements with different degrees of nonlinearity. Two fully integrated LC-voltage-controlled oscillators (VCOs) were fabricated in CMOS technology. VCO1 has a traditional varactor configuration whereas VCO2 utilized the proposed linearization method. VCO2 exhibits an average of 10 dB phase noise improvement at 100 kHz offset across the tuning range around a 4 GHz carrier. Each VCO consumes 20 mA at 1.8 V supply voltage.
Keywords :
CMOS technology; Capacitance; Circuit optimization; Phase modulation; Phase noise; Silicon; Tuning; Varactors; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Norchip Conference, 2004. Proceedings
Conference_Location :
Oslo, Norway
Print_ISBN :
0-7803-8510-1
Type :
conf
DOI :
10.1109/NORCHP.2004.1423835
Filename :
1423835
Link To Document :
بازگشت