Title :
Three dimensional confinement technology based on buried patterned AlOx layers: Potentials and applications for VCSEL arrays
Author :
Almuneau, G. ; Chouchane, F. ; Calvez, S. ; Makhloufi, H. ; Fontaine, C.
Author_Institution :
LAAS, Toulouse, France
Abstract :
A new planar technology for flexible and versatile confinement design schemes based on patterned oxide layers is presented. This method of electrical and optical confinement is an improvement over the conventional and widely used lateral oxidation, since it allows to define, from a planar surface, the confined areas. This new technique is particularly suitable for the realization of integrated photonic components arrays such as for VCSELs. First demonstrations show that the oxidation and epitaxial regrowth can be sequenced in a device process flow, leading to successful confinement while preserving good radiative properties.
Keywords :
integrated optics; oxidation; semiconductor laser arrays; surface emitting lasers; VCSEL arrays; device process flow; electrical confinement; integrated photonic components arrays; lateral oxidation; optical confinement; patterned oxide layers; planar surface; radiative properties; three dimensional confinement technology; Epitaxial growth; Gallium arsenide; Integrated optics; Oxidation; Photoluminescence; Surface treatment; Vertical cavity surface emitting lasers; Vertical cavity laser; confinement engineering; epitaxial regrowth; lateral structuration;
Conference_Titel :
Transparent Optical Networks (ICTON), 2013 15th International Conference on
Conference_Location :
Cartagena
DOI :
10.1109/ICTON.2013.6602682