GaAs microstrip-to-waveguide transition operating in the WR-1.5 waveguide band (500–750 GHz)

Author

Hurm, V. ; Tessmann, A. ; Massler, Hermann ; Leuther, A. ; Riessle, M. ; Zink, M. ; Schlechtweg, Michael ; Ambacher, Oliver

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

fYear

2012

fDate

4-7 Dec. 2012

Firstpage

145

Lastpage

147

Abstract

In this paper, we report on the development of a microstrip-to-waveguide transition for the WR-1.5 waveguide band (500-750 GHz). The microstrip lines and E-plane probes have been manufactured on 25 μm thick GaAs substrates. The transmission loss per single microstrip-to-waveguide transition is only 1.0 dB @ 670 GHz. The measured return losses are better than 10 dB up to 720 GHz. The single transition includes a waveguide section with a length of 7.0 mm corresponding to the transitions which will be used in future submillimeter-wave MMIC modules.

Keywords

III-V semiconductors; gallium arsenide; microstrip transitions; submillimetre wave integrated circuits; E-plane probes; GaAs; GaAs microstrip-to-waveguide transition; GaAs substrates; WR-1.5 waveguide band; bandwidth 500 GHz to 750 GHz; distance 7.0 mm; microstrip lines; single transition; size 25 mum; transmission loss; waveguide section; Gallium arsenide; Insertion loss; Loss measurement; MMICs; Microstrip; Substrates; Waveguide transitions; E-plane probe transition; metamorphic high electron mobility transistor (mHEMT); submillimeter-wave monolithic integrated circuits (S-MMIC); waveguide-to-microstrip transition;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2012 Asia-Pacific

Conference_Location

Kaohsiung

Print_ISBN

978-1-4577-1330-9

Electronic_ISBN

978-1-4577-1331-6

Type

conf

DOI

10.1109/APMC.2012.6421527

Filename

6421527