Title :
Gate-induced barrier field effect transistor (GBFET) - a new thin film transistor for active matrix liquid crystal display systems
Author :
Kumar, M. Jagadesh ; Orouji, Ali A.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India
Abstract :
Using two-dimensional simulation, we report a new gate-induced barrier field effect transistor (GBFET) which exhibits at least three orders of magnitude less OFF state leakage current when compared to a conventional poly-Si TFT. We demonstrate that the GBFET is completely free of pseudo-subthreshold conduction making it a very attractive device for active matrix liquid crystal display systems.
Keywords :
field effect transistors; leakage currents; liquid crystal displays; thin film transistors; 2D simulation; GBFET; OFF state leakage current; active matrix liquid crystal display system; gate-induced barrier field effect transistor; poly-Si TFT; thin film transistor; Active matrix liquid crystal displays; Annealing; FETs; Grain boundaries; Leakage current; Liquid crystal displays; MOSFETs; Silicon; Substrates; Thin film transistors;
Conference_Titel :
VLSI Design, 2006. Held jointly with 5th International Conference on Embedded Systems and Design., 19th International Conference on
Print_ISBN :
0-7695-2502-4
DOI :
10.1109/VLSID.2006.93
