Title :
A new device level digital simulator for simulation and functional verification of large semiconductor memories
Author :
Dastidar, Tathagato Rai ; Ray, Partha
Author_Institution :
Nat. Semicond. Corp., India
Abstract :
Increasing use of embedded memories in modern day system-on-chip (SoC) designs escalates the need for CAD tools for effective functional verification of memories. We present a new simulator called Natsim for device level digital circuits which can be effectively used for simulation and functional verification of large semiconductor memories and other custom digital circuits. SPICE or switch-level Verilog cannot be effectively used for simulation of memories. Conventional switch level simulators like IRSIM [Salz, 1989], too, typically fail when used for simulating memory circuits, especially SRAM circuits, due to some inherent limitations in their voltage and delay calculation algorithms. We present a technique for voltage and delay calculation which is more robust than the method employed by earlier simulators. We also present a heuristic approach to predict the final logic value at a node in the circuit in presence of MOS transistors with unknown potentials at their gates. We present a methodology for functional verification of memories using Natsim. Experimental results for a wide range of memory circuits have been presented. The work presented in this paper is pending US patent.
Keywords :
MOSFET; circuit simulation; digital circuits; formal verification; semiconductor storage; MOS transistors; Natsim simulator; device level digital circuits; device level digital simulator; final logic value; functional verification; memory circuits; semiconductor memories; Circuit simulation; Delay; Design automation; Digital circuits; Hardware design languages; SPICE; Semiconductor memory; Switches; System-on-a-chip; Voltage;
Conference_Titel :
VLSI Design, 2006. Held jointly with 5th International Conference on Embedded Systems and Design., 19th International Conference on
Print_ISBN :
0-7695-2502-4
DOI :
10.1109/VLSID.2006.19