High-Q MOS-varactor modeling for mm-wave VCOs

Author

Itano, Yuka ; Itoh, N. ; Yoshitomi, Sadayuki ; Hoshino, Hiroaki

Author_Institution

Grad. Sch. of Comput. Sci. & Syst. Eng., Okayama Prefectural Univ., Soja, Japan

fYear

2012

fDate

4-7 Dec. 2012

Firstpage

202

Lastpage

204

Abstract

High-Q and scalable MOS varactor for mm-wave VCO has been studied. To realize high-Q varactor in mm-wave region, low varactor capacitance and low series resistance of unit cell are essential. Since low varactor capacitance and low series resistance are impossible to realize simultaneously, optimization and scalable model are necessary. This paper presents strategy of high-Q optimization, a novel scalable model for mm-wave varactor, and confirmation results by VCO measurements. The Q of small-geometry varactor improved 30 times at f =30 GHz. The novel scalable varactor model improved its accuracy from 21.9% to 1.7%.

Keywords

millimetre wave oscillators; optimisation; varactors; voltage-controlled oscillators; frequency 30 GHz; high-Q MOS-varactor modeling; low series resistance; low varactor capacitance; mm-wave VCO; optimization model; scalable varactor model; small-geometry varactor; unit cell; voltage-controlled oscillator; Capacitance; Capacitance-voltage characteristics; Phase noise; Resistance; Semiconductor device modeling; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2012 Asia-Pacific

Conference_Location

Kaohsiung

Print_ISBN

978-1-4577-1330-9

Electronic_ISBN

978-1-4577-1331-6

Type

conf

DOI

10.1109/APMC.2012.6421546

Filename

6421546