A novel broadband power amplifier architecture for high efficiency and high linearity applications

Author

Alidio, Raul ; Lee, Woo Yong ; Gummalla, Ajay ; Achour, Maha

Author_Institution

Rayspan Corp., San Diego, CA, USA

fYear

2010

fDate

23-28 May 2010

Firstpage

1064

Lastpage

1067

Abstract

A novel and simple architecture for improving efficiency, bandwidth and linearity at backed-off RF power is presented. It is accomplished by a distributed amplifier with proper turn on and off of the transistor devices via an RF detector. Neither RF power combiner/splitter, DSP nor envelope amplifier is utilized. A MMIC prototype was designed and fabricated using a GaAs HBT process to verify this efficient, linear and broadband PA architecture and it measured 3% EVM and 24-25% PAE at 19.6 dBm from 2.3 GHz to 2.7 GHz using a 54 Mbps 64 QAM OFDM modulation signal.

Keywords

III-V semiconductors; MMIC; broadband networks; distributed amplifiers; gallium arsenide; heterojunction bipolar transistors; HBT process; MMIC prototype; RF detector; RF power combiner/splitter; backed-off RF power; broadband power amplifier; distributed amplifier; envelope amplifier; high efficiency applications; high linearity applications; transistor devices; Bandwidth; Broadband amplifiers; Detectors; Digital signal processing; Distributed amplifiers; High power amplifiers; Linearity; Power combiners; Radio frequency; Radiofrequency amplifiers; MMIC; bandwidth; envelope detection; orthogonal frequency-division multiplexing (OFDM); power added efficiency; power amplifier (PA); power amplifier architecture;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5515164

Filename

5515164