Title :
Analysis of 900 MHz SAW filters on ZnO/GaAs structures
Author :
Haddou, A. ; Gryba, T. ; Lefebvre, J.E. ; Sadaune, V. ; Zhang, V. ; Cattan, E.
Author_Institution :
IEMN, Valenciennes Univ., France
Abstract :
Up to now, RF front-end and interstage surface acoustic wave (SAW) filters for mobile communication are mainly fabricated on LiNbO3 and LiTaO3 substrates. A monolithic integration of these filters on GaAs or Si substrates is highly desirable to miniaturize the outer dimensions of the cellular phones. Direct monolithic integration of SAW filters is impossible with Si which is non piezoelectric, and difficult with GaAs which is weakly piezoelectric. One alternative is the deposition of a piezoelectric film on the semiconductor substrate. In this paper, we present an analysis of a ladder SAW filter built up on a two-layered structure made up of a ZnO film on a GaAs substrate in the 900 MHz frequency range
Keywords :
UHF filters; cellular radio; gallium arsenide; ladder filters; matrix algebra; piezoelectric semiconductors; piezoelectric thin films; surface acoustic wave resonator filters; telephone sets; zinc compounds; 900 MHz; GaAs; GaAs substrate; RF front-end filters; RF interstage filters; UHF SAW filters; ZnO; ZnO-GaAs; ZnO/GaAs structures; cellular phone application; ladder SAW filter; mobile communication application; monolithic integration; piezoelectric film; semiconductor substrate; surface acoustic wave filters; two-layered structure; Acoustic waves; Gallium arsenide; Mobile communication; Monolithic integrated circuits; Piezoelectric films; Radio frequency; SAW filters; Substrates; Surface acoustic waves; Zinc oxide;
Conference_Titel :
Ultrasonics Symposium, 2000 IEEE
Conference_Location :
San Juan
Print_ISBN :
0-7803-6365-5
DOI :
10.1109/ULTSYM.2000.922514
