Analysis of 900 MHz SAW filters on ZnO/GaAs structures

Author

Haddou, A. ; Gryba, T. ; Lefebvre, J.E. ; Sadaune, V. ; Zhang, V. ; Cattan, E.

Author_Institution

IEMN, Valenciennes Univ., France

Volume

1

fYear

2000

fDate

36800

Firstpage

91

Abstract

Up to now, RF front-end and interstage surface acoustic wave (SAW) filters for mobile communication are mainly fabricated on LiNbO₃ and LiTaO₃ substrates. A monolithic integration of these filters on GaAs or Si substrates is highly desirable to miniaturize the outer dimensions of the cellular phones. Direct monolithic integration of SAW filters is impossible with Si which is non piezoelectric, and difficult with GaAs which is weakly piezoelectric. One alternative is the deposition of a piezoelectric film on the semiconductor substrate. In this paper, we present an analysis of a ladder SAW filter built up on a two-layered structure made up of a ZnO film on a GaAs substrate in the 900 MHz frequency range

Keywords

UHF filters; cellular radio; gallium arsenide; ladder filters; matrix algebra; piezoelectric semiconductors; piezoelectric thin films; surface acoustic wave resonator filters; telephone sets; zinc compounds; 900 MHz; GaAs; GaAs substrate; RF front-end filters; RF interstage filters; UHF SAW filters; ZnO; ZnO-GaAs; ZnO/GaAs structures; cellular phone application; ladder SAW filter; mobile communication application; monolithic integration; piezoelectric film; semiconductor substrate; surface acoustic wave filters; two-layered structure; Acoustic waves; Gallium arsenide; Mobile communication; Monolithic integrated circuits; Piezoelectric films; Radio frequency; SAW filters; Substrates; Surface acoustic waves; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2000 IEEE

Conference_Location

San Juan

ISSN

1051-0117

Print_ISBN

0-7803-6365-5

Type

conf

DOI

10.1109/ULTSYM.2000.922514

Filename

922514