DocumentCode :
3094647
Title :
Sputter deposition of stress controlled piezoelectric AlN and AlScN films for ultrasonic and energy harvesting applications
Author :
Barth, Stephan ; Bartzsch, Hagen ; Gloess, Daniel ; Frach, Peter ; Herzog, Thomas ; Walter, Steffen ; Heuer, Henning
Author_Institution :
Fraunhofer Inst. for Electron Beam & Plasma Technol. (FEP), Dresden, Germany
fYear :
2013
fDate :
21-25 July 2013
Firstpage :
1351
Lastpage :
1353
Abstract :
This paper will report on the deposition and characterization of piezoelectric AlN and AlxSc1-xN layers. A special focus is on the characterization regarding the mechanical stress in the films. Potential applications of the films are in ultrasonic microscopy, energy harvesting and SAW/BAW filters. To demonstrate the potential in ultrasonic applications, the pulse echo method was used.
Keywords :
III-V semiconductors; aluminium compounds; internal stresses; piezoelectric semiconductors; piezoelectric thin films; scandium compounds; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; AlXSc1-XN; AlN; BAW filters; SAW filters; energy harvesting applications; mechanical stress; pulse echo method; sputter deposition; stress controlled piezoelectric films; ultrasonic applications; ultrasonic microscopy; Acoustics; Films; III-V semiconductor materials; Sputtering; Stress; Substrates; X-ray scattering; AlN; AlScN; Sputter Deposition; Stress Control; piezoelectric;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2013 IEEE International
Conference_Location :
Prague
ISSN :
1948-5719
Print_ISBN :
978-1-4673-5684-8
Type :
conf
DOI :
10.1109/ULTSYM.2013.0344
Filename :
6724945
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3094647
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