DocumentCode :
3094691
Title :
Aspects of robust high-power semiconductor laser design with state-of-the-art performance for a uniform and reproducible volume manufacturing
Author :
Pietrzak, A. ; Hülsewede, R. ; Zorn, M. ; Hirsekorn, O. ; Sebastian, J.
Author_Institution :
Jenoptik Diode Lab. GmbH, Berlin, Germany
fYear :
2012
fDate :
9-11 July 2012
Firstpage :
17
Lastpage :
18
Abstract :
Diode lasers for volume production should be non-sensitive to manufacturing process variations. JENOPTIK Diode Lab presents a modal loss focused design process of GaAs-based 9xx-laser structures, which is necessary for stable volume.
Keywords :
III-V semiconductors; gallium arsenide; laser beams; optical design techniques; optical losses; semiconductor lasers; 9xx-laser structures; GaAs; diode lasers; manufacturing process; modal loss focused design; reproducible volume manufacturing; robust high-power semiconductor laser design; uniform volume manufacturing; volume production; Epitaxial growth; Laser stability; Loss measurement; Measurement by laser beam; Optical losses; Robustness; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2012 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4577-1526-6
Type :
conf
DOI :
10.1109/PHOSST.2012.6280727
Filename :
6280727
Link To Document :
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