DocumentCode
3094691
Title
Aspects of robust high-power semiconductor laser design with state-of-the-art performance for a uniform and reproducible volume manufacturing
Author
Pietrzak, A. ; Hülsewede, R. ; Zorn, M. ; Hirsekorn, O. ; Sebastian, J.
Author_Institution
Jenoptik Diode Lab. GmbH, Berlin, Germany
fYear
2012
fDate
9-11 July 2012
Firstpage
17
Lastpage
18
Abstract
Diode lasers for volume production should be non-sensitive to manufacturing process variations. JENOPTIK Diode Lab presents a modal loss focused design process of GaAs-based 9xx-laser structures, which is necessary for stable volume.
Keywords
III-V semiconductors; gallium arsenide; laser beams; optical design techniques; optical losses; semiconductor lasers; 9xx-laser structures; GaAs; diode lasers; manufacturing process; modal loss focused design; reproducible volume manufacturing; robust high-power semiconductor laser design; uniform volume manufacturing; volume production; Epitaxial growth; Laser stability; Loss measurement; Measurement by laser beam; Optical losses; Robustness; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Society Summer Topical Meeting Series, 2012 IEEE
Conference_Location
Seattle, WA
Print_ISBN
978-1-4577-1526-6
Type
conf
DOI
10.1109/PHOSST.2012.6280727
Filename
6280727
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