DocumentCode
3094822
Title
Carbon nanotube electronics
Author
Javey, Ali ; Dai, Hongjie
Author_Institution
Harvard Univ., Cambridge, MA, USA
fYear
2006
fDate
3-7 Jan. 2006
Abstract
The potentials of carbon nanotubes as building blocks for future electronics are explored. They are found to perform favorably in terms of ON state current density as compared to the conventional Si technology, owing to their superb electron transport properties and compatibility with high-K gate dielectrics.
Keywords
carbon nanotubes; current density; electron transport theory; elemental semiconductors; silicon; Si; carbon nanotubes; current density; electron transport properties; high-K gate dielectrics; Carbon nanotubes; Chemical technology; Electrons; Integrated circuit technology; Photonic band gap; Physics; Semiconductivity; Semiconductor materials; Temperature; Wrapping;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, 2006. Held jointly with 5th International Conference on Embedded Systems and Design., 19th International Conference on
ISSN
1063-9667
Print_ISBN
0-7695-2502-4
Type
conf
DOI
10.1109/VLSID.2006.57
Filename
1581492
Link To Document