Title :
Carbon nanotube electronics
Author :
Javey, Ali ; Dai, Hongjie
Author_Institution :
Harvard Univ., Cambridge, MA, USA
Abstract :
The potentials of carbon nanotubes as building blocks for future electronics are explored. They are found to perform favorably in terms of ON state current density as compared to the conventional Si technology, owing to their superb electron transport properties and compatibility with high-K gate dielectrics.
Keywords :
carbon nanotubes; current density; electron transport theory; elemental semiconductors; silicon; Si; carbon nanotubes; current density; electron transport properties; high-K gate dielectrics; Carbon nanotubes; Chemical technology; Electrons; Integrated circuit technology; Photonic band gap; Physics; Semiconductivity; Semiconductor materials; Temperature; Wrapping;
Conference_Titel :
VLSI Design, 2006. Held jointly with 5th International Conference on Embedded Systems and Design., 19th International Conference on
Print_ISBN :
0-7695-2502-4
DOI :
10.1109/VLSID.2006.57
