DocumentCode :
3094879
Title :
Die/wafer stacking with reciprocal design symmetry (RDS) for mask reuse in three-dimensional (3D) integration technology
Author :
Alam, Syed M. ; Jones, Robert E. ; Pozder, Scott ; Jain, Ankur
Author_Institution :
Everspin Technol., Inc., Austin, TX
fYear :
2009
fDate :
16-18 March 2009
Firstpage :
569
Lastpage :
575
Abstract :
Each stratum in a 3D chip usually requires a unique mask set which increases the mask cost for a multi-strata chip compared to its 2D counterpart. We present a novel design technique using reciprocal design symmetry (RDS) that allows a mask set (or at least a majority of these) to be used for different strata while still achieving vertical placement and connection of different design functionalities. We demonstrate an application of RDS using a detailed example of a 3D dual-core microprocessor with analyses of various design complexity and testability issues, and a comprehensive simulation and comparison of its thermal characteristics. The coarse grained partitioning of self-contained functional units achieved with RDS is suitable for early adoption of 3D technology as well as for long-term application to low cost system integration due to less redesign effort, design tool requirements, and better testability of each stratum before and after bonding.
Keywords :
integrated circuit design; integrated circuit testing; microprocessor chips; thermal management (packaging); wafer level packaging; 3D dual-core microprocessor; coarse grained partitioning; die level stacking; mask reuse; reciprocal design symmetry; self-contained functional units; three-dimensional integration technology; wafer level stacking; Analytical models; Costs; Dielectric substrates; Etching; Integrated circuit interconnections; Microprocessors; Stacking; Testing; Through-silicon vias; Wafer bonding; 3D IC; 3D Integration; Die/Wafer Stacking; Mask Reuse; Reciprocal Design Symmetry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2952-3
Electronic_ISBN :
978-1-4244-2953-0
Type :
conf
DOI :
10.1109/ISQED.2009.4810357
Filename :
4810357
Link To Document :
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