Title :
Lateral far-field of multiple-stripe high power 1480nm broad-area-lasers for pulsed operation
Author :
Fendler, D. ; Spiegelberg, M. ; Moehrle, M. ; Rehbein, W.
Author_Institution :
Fraunhofer Inst. for Telecommun., Heinrich-Hertz-Inst., Berlin, Germany
Abstract :
In this paper we present results about novel multiple stripe broad area lasers that show a significantly narrower optical far-field compared with conventional single stripe lasers. The laser diode consists of an InGaAsP-MQW-structure embedded in a large optical cavity (LOC) waveguide. The well-known LOC design is adopted to decrease the optical confinement of the optical mode in the p-InP cladding layer (low absorption losses) and to increase the size of the optical mode in order to obtain a narrow far-field. The p-doped InP-ridge structure is etched down to the p-side waveguide providing lateral index guiding of the optical mode. The p-contact is Au-electroplated for efficient heat dissipation in upside-down configuration.
Keywords :
III-V semiconductors; claddings; electroplating; etching; gallium arsenide; gold; indium compounds; laser beams; laser cavity resonators; laser modes; optical losses; quantum well lasers; waveguide lasers; BA laser diodes; InGaAsP-InP-Au; LOC design; MQW-structure; absorption losses; cladding layer; electroplating; etching; heat dissipation; large optical cavity waveguide; lateral far-field; lateral index guiding; multiple-stripe high power broad area laser diodes; narrower optical far-field; optical confinement; optical mode; p-contact; p-doped ridge structure; p-side waveguide; pulsed operation; upside-down configuration; wavelength 1480 nm; Biomedical optical imaging; Diode lasers; Laser modes; Optical imaging; Optical pumping; Optical scattering; Semiconductor lasers;
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2012 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4577-1526-6
DOI :
10.1109/PHOSST.2012.6280738
