Title :
Dilute bismides for near and mid-infrared applications
Author :
Yuxin Song ; Yi Gu ; Hong Ye ; Peixiong Shi ; Hallen, Anders ; Xiren Chen ; Jun Shao ; Shumin Wang
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenborg, Sweden
Abstract :
Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III-V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared spectra; molecular beam epitaxial growth; optical communication; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; GaSbBi; III-V host materials; InGaAsBi; band-gap reduction; dilute bismides; mid-infrared optoelectronics; molecular beam epitaxy; near-infrared optoelectronics; optical communication window; quantum well structures; spin-orbit splitting; thin films; Bismuth; Gallium arsenide; Molecular beam epitaxial growth; Photonic band gap; Substrates; Temperature measurement; GaSbBi; InGaAsBi; InSbBi; MBE; dilute bismide; infrared;
Conference_Titel :
Transparent Optical Networks (ICTON), 2013 15th International Conference on
Conference_Location :
Cartagena
DOI :
10.1109/ICTON.2013.6602735
