GaN pHEMT power amplifier for cellular network base station

Power amplifier (PA) is one of the main parts of digital transceiver of base station of cellular network. Wide bandgap material GaN is one of the most promising technologies in semiconductor devices. In order to develop GaN PA topology is necessary to create the correct nonlinear model of usage transistor and matching circuits. The high accuracy, the multicell power GaN pHEMT model (without optimization usage) was proposed. The calculation precision of matching circuits was achieved by creation of electromagnetic (EM) based models.